Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
نویسندگان
چکیده
منابع مشابه
Introduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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ژورنال
عنوان ژورنال: Surface and Coatings Technology
سال: 2017
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2017.07.056